Image sensor and production method thereof

Details Image sensor and production method thereof Image sensor and production method thereof

1988-11-22

1989-12-26

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

250578, 357 2, H01J 4014

Patent

active

048899836

ABSTRACT:
An image sensor includes an amorphous silicon photodiode on an insulating substrate, an amorphous silicon thin film transistor disposed on the same substrate for reading out charges stored by said photodiode, and a wiring film as a source/drain electrode of said transistor and as a first electrode of the photodiode free of steps. The image sensor may include a matrix wiring section for taking out signals, a silicon film including a channel protection film for the transistor, an insulating film for the matrix wiring, and a second conductor of the matrix wiring connected with the source/drain electrode of the transistor and arranged in a direction generally normal to the source/drain electrode and disposed on the wiring film.

REFERENCES:
patent: 4763010 (1988-08-01), Fukaya et al.
patent: 4823178 (1989-04-01), Suda

Affiliated with

Also associated with

Rating

Image sensor and production method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Image sensor and production method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor and production method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1578222