Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-05-09
2006-05-09
Owens, Douglas W (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000
Reexamination Certificate
active
07042008
ABSTRACT:
An image sensor has a CdTe plate, a plurality of hole-type electrodes, and a voltage-applying unit. The hole-type electrodes are arranged at predetermined intervals in the direction of thickness. The voltage-applying unit applies a voltage to the hole-type electrodes. One of the electrodes is not adjacent to any other electrode and is used as an anode. The remaining electrodes are used as cathodes. A sensor-element array is provided on the detecting surface of the image sensor. The array comprises a plurality of sensor elements arranged in the form of a matrix. Each sensor element comprises an anode, a plurality of cathodes, and CdTe lying between the anode and the cathodes.
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Tadayuki Takahashi et al., “Recent Progress in CdTe and CdZnTe Detectors”, IEEE Transactions on Nuclear Science, vol. 48, No. 4, Aug. 4, 2001, pp. 950-959.
Kuroda Yoshikatsu
Mizuno Yasushi
Takahashi Tadayuki
Japan as represented by the Director-General of the Institute of
Mitsubishi Heavy Industries Ltd.
Owens Douglas W
Wenderoth , Lind & Ponack, L.L.P.
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