Image sensor and method of manufacturing the same

Details Image sensor and method of manufacturing the same Image sensor and method of manufacturing the same

2005-03-22

2005-03-22

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S066000, C438S305000

Reexamination Certificate

active

06869817

ABSTRACT:
Disclosed is a method of manufacturing an image sensor having light sensitivity over a photodiode equal in area to that of a unit pixel. The image sensor includes an image sensor comprising: a first semiconductor substrate doped with a first conductive dopant; a first diffusion layer formed in the semiconductor substrate and doped with a second conductive dopant; a second diffusion layer formed in the semiconductor substrate adjacent the first diffusion layer and having a width wider than a width of the first diffusion layer; a third diffusion layer doped with the first conductive dopant and formed at an exposed surface of the semiconductor substrate in the first diffusion layer; a gate electrode formed on the exposed surface and having a first edge adjacent to the third diffusion layer; and a fourth diffusion layer doped with the second conductive dopant and formed at the exposed surface adjacent a second edge of the gate electrode, the fourth diffusion layer defining a gap with the second diffusion layer.

REFERENCES:
patent: 6225670 (2001-05-01), Dierickx
patent: 6677656 (2004-01-01), François
patent: 20010098144 (2001-11-01), None
Dierickx, et al., “Near-100% fill factor standard CMOS active pixel,” IEEE CCD & AIS workshop, Brugge, Belgium, Jun. 5-7, 1997; Proceedings p. P1.
Meynants, et al., “CMOS active pixel image sensor with CCD performance,” AFPAEC Europto/SPIE, Zurich, May 18-21, 1998; Proc. Spie, vol. 340, pp. 68-76 (1998).
Notice of Preliminary Rejection issued from the Korean Intellectual Property Office, Aug. 30, 2003.

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