Image sensor and method of manufacturing the same

Details Image sensor and method of manufacturing the same Image sensor and method of manufacturing the same

2008-10-12

2010-10-05

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257SE27130, C257SE27131, C257SE27132

Reexamination Certificate

active

07808066

ABSTRACT:
An image sensor includes a semiconductor substrate including a pixel region and a peripheral circuit region; interlayer insulating films including metal wires arranged on the pixel region and the peripheral circuit region; and a photodiode and an upper electrode disposed on the interlayer insulating film of the pixel region. Further, the image sensor includes a protective layer disposed on the semiconductor substrate including the upper electrode and the interlayer insulating film of the peripheral circuit region and having a sloping portion in a region corresponding to the sidewall of the photodiode; via holes disposed on the protective layer so as to selectively expose the upper electrode and the metal wires of the peripheral circuit region; and upper wiring disposed on the protective layer including the via holes.

REFERENCES:
patent: 5936261 (1999-08-01), Ma et al.
patent: 6600172 (2003-07-01), Matsuno
patent: 6759262 (2004-07-01), Theil et al.
patent: 2008/0203452 (2008-08-01), Moon et al.
patent: 2000-156488 (2000-06-01), None
patent: 10-2001-0061959 (2001-07-01), None

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