Image sensor and method of manufacturing the same

Details Image sensor and method of manufacturing the same Image sensor and method of manufacturing the same

2008-04-30

2010-02-23

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S070000, C438S071000, C438S072000, C257SE31127

Reexamination Certificate

active

07666705

ABSTRACT:
Provided is an image sensor and method of manufacturing the same. The image sensor can include a semiconductor substrate, a metal interconnection layer, an inorganic layer, lens seed patterns, and microlenses. The semiconductor substrate can include unit pixels. The metal interconnection layer can be disposed on the semiconductor substrate to provide signal and poser connections to the unit pixels. The inorganic layer can be disposed on the metal interconnection layer. The lens seed patterns are selectively disposed on the inorganic layer and are formed of an organic material. The microlenses are formed on the lens seed patterns.

REFERENCES:
patent: 4694185 (1987-09-01), Weiss
patent: 2007/0276972 (2007-11-01), Kikuchi et al.
patent: 10-1998-0061089 (2000-07-01), None
patent: 10-2004-0115874 (2006-07-01), None

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