Image sensor and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S431000, C257SE31127, C257SE31001, C257SE21001, C257SE21158, C438S070000, C438S073000, C438S096000

Reexamination Certificate

active

07745896

ABSTRACT:
An image sensor and method for manufacturing the same are provided. The image sensor can include a semiconductor substrate, a metal interconnection layer, a light-receiving unit, a lens-type upper electrode, and a color filter. The semiconductor substrate can include a circuit region. The metal interconnection layer can include a metal interconnection and an interlayer dielectric. The light-receiving unit can be a photodiode disposed on the metal interconnection layer. The lens-type upper electrode can be disposed on the light-receiving unit and formed in a convex lens shape. The color filter can be disposed on the lens-type upper electrode.

REFERENCES:
patent: 2006/0267054 (2006-11-01), Martin et al.
patent: 2008/0079102 (2008-04-01), Chen et al.
patent: 2008/0224243 (2008-09-01), Lee
patent: 2006-253422 (2006-09-01), None

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