Image sensor and method of manufacturing the same

Details Image sensor and method of manufacturing the same Image sensor and method of manufacturing the same

2008-05-16

2010-06-29

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S431000, C257SE31127, C257SE31001, C257SE21001, C257SE21158, C438S070000, C438S073000, C438S096000

Reexamination Certificate

active

07745896

ABSTRACT:
An image sensor and method for manufacturing the same are provided. The image sensor can include a semiconductor substrate, a metal interconnection layer, a light-receiving unit, a lens-type upper electrode, and a color filter. The semiconductor substrate can include a circuit region. The metal interconnection layer can include a metal interconnection and an interlayer dielectric. The light-receiving unit can be a photodiode disposed on the metal interconnection layer. The lens-type upper electrode can be disposed on the light-receiving unit and formed in a convex lens shape. The color filter can be disposed on the lens-type upper electrode.

REFERENCES:
patent: 2006/0267054 (2006-11-01), Martin et al.
patent: 2008/0079102 (2008-04-01), Chen et al.
patent: 2008/0224243 (2008-09-01), Lee
patent: 2006-253422 (2006-09-01), None

Affiliated with

Also associated with

Rating

Image sensor and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Image sensor and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4153523