Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2007-06-05
2007-06-05
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S187000, C257S192000, C257S222000, C257S226000, C257S291000, C257S461000
Reexamination Certificate
active
11053358
ABSTRACT:
Disclosed is a method of manufacturing an image sensor having light sensitivity over a photodiode equal in area to that of a unit pixel. The image sensor includes an image sensor comprising: a first semiconductor substrate doped with a first conductive dopant; a first diffusion layer formed in the semiconductor substrate and doped with a second conductive dopant; a second diffusion layer formed in the semiconductor substrate adjacent the first diffusion layer and having a width wider than a width of the first diffusion layer; a third diffusion layer doped with the first conductive dopant and formed at an exposed surface of the semiconductor substrate in the first diffusion layer; a gate electrode formed on the exposed surface and having a first edge adjacent to the third diffusion layer; and a fourth diffusion layer doped with the second conductive dopant and formed at the exposed surface adjacent a second edge of the gate electrode, the fourth diffusion layer defining a gap with the second diffusion layer.
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Dierickx, et al., “Near-100% fill factor standard CMOS active pixel,” IEEE CCD & AIS workshop, Brugge, Belgium, Jun. 5-7, 1997; Proceedings p. P1.
Meynants, et al., “CMOS active pixel image sensor with CCD performance,” AFP AEC Europto/SPIE, Zurich, May 18-21, 1998; Proc. Spie, vol. 340, pp. 68-76 (1998).
Notice of Preliminary Rejection issued from the Korean Intellectual Property Office, Aug. 30, 2003.
Hynix / Semiconductor Inc.
Louie Wai-Sing
Marshall & Gerstein & Borun LLP
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