Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-11-14
2006-11-14
Tran, Thien F. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S258000, C257S291000, C257S444000
Reexamination Certificate
active
07135706
ABSTRACT:
On a transparent electrically insulating substrate, formed are a scanning line, and a gate electrode of a switching element, further formed are a gate insulating film, a semiconductor layer, an n+-Si layer to be formed into a source electrode and a drain electrode. After the patterning of the foregoing structure, the dielectric film is formed, and the portion corresponding to the contact hole is removed by etching, and photosensitive resin is applied to form the interlayer insulating film. Then, the transparent electrode is extended from the pixel electrode over the switching element, whereon a conversion layer and a gold layer for use in electrode are vapor-deposited. In this structure, an increase in capacitor between the pixel electrode and the signal line can be suppressed by the interlayer insulating film, and the transparent electrode functions as a top gate and release excessive electric charge. As a result, excessive electric charge can be released effectively in the double gate structure while suppressing an increase in capacitor between the pixel electrode and the signal line.
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Izumi Yoshihiro
Nagata Hisashi
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
Tran Thien F.
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