Image sensor and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

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C257S072000, C257S258000, C257S291000, C257S444000

Reexamination Certificate

active

07135706

ABSTRACT:
On a transparent electrically insulating substrate, formed are a scanning line, and a gate electrode of a switching element, further formed are a gate insulating film, a semiconductor layer, an n+-Si layer to be formed into a source electrode and a drain electrode. After the patterning of the foregoing structure, the dielectric film is formed, and the portion corresponding to the contact hole is removed by etching, and photosensitive resin is applied to form the interlayer insulating film. Then, the transparent electrode is extended from the pixel electrode over the switching element, whereon a conversion layer and a gold layer for use in electrode are vapor-deposited. In this structure, an increase in capacitor between the pixel electrode and the signal line can be suppressed by the interlayer insulating film, and the transparent electrode functions as a top gate and release excessive electric charge. As a result, excessive electric charge can be released effectively in the double gate structure while suppressing an increase in capacitor between the pixel electrode and the signal line.

REFERENCES:
patent: 6011274 (2000-01-01), Gu et al.
patent: 6121660 (2000-09-01), Yamazaki et al.
patent: 6124606 (2000-09-01), den Boer et al.
patent: 6642541 (2003-11-01), Nagata et al.
patent: 6784949 (2004-08-01), Nagata et al.
patent: 62-162357 (1987-07-01), None
patent: 4-212458 (1992-08-01), None
patent: 9-511361 (1997-11-01), None
patent: 2000-065941 (2000-03-01), None
U.S. Appl. No. 10/458,282, filed Jun. 11, 2003.
M. Ikeda et al.: “Real-time Imaging Flat Panel X-Ray Detector”, AM-LCD '99, pp. 45-58.
D. Waechter et al.: “Characteristics of dual-gate thin-film transistors for applications in digital radiology” Can.I.Phys. (Suppl.) 74: S131-S134 (NRC '96).
W. Den Boer et al.: “Similarities between TFT Arrays for Direct-Conversion X-Ray Sensors and High-Aperture AMLCDs” SID 98 DIGEST pp. 371-374.
Japanese Office Action in counterpart Japanese application dated Jan. 27, 2004, and English language translation thereof.
den Boer et al.; “25.1: Similarities between TFT Arrays for Direct-Conversion X-Ray Sensors and High-Aperture AMLCDs”; SID 98 DIGEST; 1998; pp. 371-374.
Original and English translation of Korean Patent Office action dated Mar. 30, 2004.
Original and English translation of Japanese Office Action dated Apr. 20, 2004.

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