Image sensor and method of manufacturing same

Details Image sensor and method of manufacturing same Image sensor and method of manufacturing same

2007-04-17

2007-04-17

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S414000, C257S428000, C257S431000, C257SE31127, C438S048000, C438S057000, C438S069000

Reexamination Certificate

active

11229764

ABSTRACT:
An image sensor includes a photodiode formed in substrate, an insulating interlayer structure formed on the substrate, a metal structure formed in the insulating interlayer structure, a dummy pattern formed on the insulating interlayer structure, and a light-shielding layer pattern enclosing the dummy pattern. The dummy pattern is at least partially overlapped by the metal structure and the light-shielding layer pattern is at least partially overlapped by the photodiode.

REFERENCES:
patent: 6235549 (2001-05-01), Bawolek et al.
patent: 08-250694 (1996-09-01), None
patent: 2000-091553 (2000-03-01), None
patent: 1020000003031 (2000-01-01), None

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