Image sensor and method of manufacture

Details Image sensor and method of manufacture Image sensor and method of manufacture

1993-09-17

1994-08-09

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257 53, 257443, 257446, 257448, H01L 3104, H01L 2714

Patent

active

053369068

ABSTRACT:
An image sensor comprising a plurality of photo-electric conversion elements formed by layering a metal electrode, a photo-electric conversion layer, and a translucent electrode, the translucent electrode being divided into individual electrodes which are provided for the respective photo-electric conversion elements, and wherein at least the surfaces of the photo-electric conversion layer adjoining the translucent electrodes which appear between the individual electrodes are removed.

REFERENCES:
patent: 4281208 (1981-07-01), Kuwano et al.
patent: 4446364 (1984-05-01), Hayashi et al.
patent: 4678542 (1987-07-01), Boer et al.
patent: 4680085 (1987-07-01), Vijan et al.
patent: 4754152 (1988-06-01), Hayama et al.

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