Image sensor and method of forming the same

Details Image sensor and method of forming the same Image sensor and method of forming the same

2008-05-13

2008-05-13

Quach, T. N. (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S057000, C438S237000, C257SE21438

Reexamination Certificate

active

07371599

ABSTRACT:
An image sensor includes a semiconductor substrate, a photo receiving area in the semiconductor substrate, a gate electrode installed in a lateral side of the photo receiving area on the semiconductor substrate, and a patterned dielectric layer covering the gate electrode, the photo receiving area, and exposing a partial gate electrode. A spacer surrounds the gate electrode on the dielectric layer.

REFERENCES:
patent: 6023081 (2000-02-01), Drowley et al.
patent: 6166405 (2000-12-01), Kuriyama et al.
patent: 7005689 (2006-02-01), Song et al.
patent: 7057219 (2006-06-01), Park et al.
patent: 7238562 (2007-07-01), Jang
patent: 2005/0274995 (2005-12-01), Park
patent: 2006/0121640 (2006-06-01), Kim

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