Image sensor and method of fabricating the same

Details Image sensor and method of fabricating the same Image sensor and method of fabricating the same

2005-12-30

2008-11-04

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S048000, C438S758000, C257SE27134

Reexamination Certificate

active

07445950

ABSTRACT:
Provided is an image sensor including an overcoating layer and at least two micro lenses formed on the overcoating layer. The image sensor is characterized in that the overcoating layer positioned below a clearance between the micro lenses is etched such that curved surfaces of the micro lenses extend to the etched overcoating layer, and a contamination in the bonding pad can be prevented.

REFERENCES:
patent: 6081018 (2000-06-01), Nakashiba et al.
patent: 6242730 (2001-06-01), Lin et al.
patent: 6660624 (2003-12-01), Tzeng et al.
patent: 10-2000-0003929 (2000-01-01), None
Office Action from the Korean Intellectual Property Office, dated Apr. 28, 2006, in related Korean Patent Application No. 10-2004-0117224.

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