Image sensor and method of fabricating the same

Details Image sensor and method of fabricating the same Image sensor and method of fabricating the same

2008-10-26

2011-10-18

Shingleton, Michael (Department: 2815)

Semiconductor device manufacturing: process

Making conductivity modulation device

C257S187000, C257S192000, C257S195000, C257S197000

Reexamination Certificate

active

08039324

ABSTRACT:
An image sensor includes a semiconductor substrate, a photodiode formed in the semiconductor substrate, a first impurity region formed in the semiconductor substrate spaced from the photodiode, a second impurity region formed in the semiconductor substrate spaced from the first impurity region, a first gate formed over the semiconductor substrate between the photodiode and the first impurity region, a second gate formed over the semiconductor substrate between the first impurity region and the second impurity region, a spacer formed over the fourth impurity region and a first sidewall of the second gate, and an insulating film formed over the photodiode, the first gate, the first impurity region and a second sidewall and a portion of the uppermost surface of the second gate.

REFERENCES:
patent: 7495306 (2009-02-01), Langguth et al.
patent: 2006/0006436 (2006-01-01), Mouli
patent: 2006/0033126 (2006-02-01), Mouli
patent: 1650043 (2005-08-01), None
patent: 10-2007-0005807 (2007-01-01), None
patent: 10-2007-0035066 (2007-03-01), None
patent: WO 03/057942 (2003-07-01), None
English translation of the Chinese Office Action dated May 25, 2010.

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