Image sensor and method for manufacturing the sensor

Details Image sensor and method for manufacturing the sensor Image sensor and method for manufacturing the sensor

2011-03-01

2011-03-01

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S294000, C257S432000, C257S434000, C257S435000

Reexamination Certificate

active

07898050

ABSTRACT:
An image sensor and a method for manufacturing the sensor are provided for reducing loss of light reflected from photodiodes, and thus, improving light efficiency. The method of manufacturing an image sensor can include providing a semiconductor substrate having a photodiode; and then forming a reflective film frame on the photodiode, the reflective film frame having sidewalls that are inclined with respect to the uppermost surface of the photodiode; and then forming an opening over the surface of the reflective film frame and corresponding to the photodiode by forming a reflective film on the sidewalls of the reflective film frame.

REFERENCES:
patent: 2006/0231898 (2006-10-01), Jeong et al.
patent: 2007/0235756 (2007-10-01), Kato
patent: 10-1999-0013793 (1999-02-01), None

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