Image sensor and method for manufacturing the same

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S066000, C438S070000, C438S098000, C257SE31121, C257SE31124, C257SE31127

Reexamination Certificate

active

07863073

ABSTRACT:
An image sensor and a method for manufacturing the same are provided. The image sensor comprises at least one unit pixel, an interlayer dielectric, a color filter, a planarization layer, and a microlens. The microlens has a smooth surface after performing a plasma treatment process.

REFERENCES:
patent: 7253018 (2007-08-01), Kim
patent: 7294524 (2007-11-01), Park
patent: 2007/0161147 (2007-07-01), Kim
patent: 10-2004-0059459 (2006-02-01), None
patent: 10-2004-0112057 (2006-06-01), None
patent: 10-2005-0100204 (2007-03-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Image sensor and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Image sensor and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2733681

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.