Image sensor and method for manufacturing the same

Details Image sensor and method for manufacturing the same Image sensor and method for manufacturing the same

2011-04-05

2011-04-05

Thai, Luan C (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C257S458000, C257S449000, C257SE31062, C257SE27133

Reexamination Certificate

active

07919344

ABSTRACT:
Provided is an image sensor and a method for manufacturing the same. The image sensor includes a substrate on which a circuitry including a first lower metal line and a second lower metal line is formed. A lower electrode is formed on the first lower metal line. A separation metal pattern surrounds the lower electrode and connected to the second lower metal line. An intrinsic layer is formed on the lower electrode. A second conductive type conduction layer is formed on the intrinsic layer. An upper electrode is formed on the second conductive type conductive layer. A bias can be applied to the second lower metal line such that the separation metal pattern can provide a Schottky Barrier, directing electrons to the lower electrode and inhibiting crosstalk between pixels.

REFERENCES:
patent: 6229191 (2001-05-01), Cao et al.
patent: 6396118 (2002-05-01), Theil et al.
patent: 6586812 (2003-07-01), Cao et al.
patent: 6759262 (2004-07-01), Theil et al.

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