Image sensor and method for manufacturing the same

Details Image sensor and method for manufacturing the same Image sensor and method for manufacturing the same

2011-01-04

2011-01-04

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S059000, C438S075000, C438S282000, C438S297000, C438S771000, C257S292000, C257SE29165, C257SE27133, C257SE31114

Reexamination Certificate

active

07863077

ABSTRACT:
An image sensor and method of manufacturing the same are disclosed. A semiconductor substrate can be prepared comprising a photodiode region, a transistor region, and a floating diffusion region. A gate dielectric can be disposed under a surface of the semiconductor substrate in the transistor region. A first dielectric pattern can be provided having a portion above and a portion below the surface of the semiconductor substrate in the photodiode and the floating diffusion regions. A second dielectric can be disposed under the gate dielectric. The second dielectric can extend the depth of the gate dielectric into the semiconductor substrate to space the movement path of photoelectrons from the photodiode region to the floating diffusion region.

REFERENCES:
patent: 6936503 (2005-08-01), Takehiro
patent: 2004/0023454 (2004-02-01), Yao et al.
patent: 2006/0081887 (2006-04-01), Lyu
patent: 2007/0145510 (2007-06-01), Lim
patent: 2007/0155082 (2007-07-01), Shim

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