Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2011-05-03
2011-05-03
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S007000, C438S060000, C257S432000, C257S440000, C257S443000, C257S444000, C257S083000, C257S089000, C257S098000, C257SE31127
Reexamination Certificate
active
07935551
ABSTRACT:
A method for manufacturing a sensor image may include forming a pixel array including a photodiode structure and an insulating film structure in an active area of a semiconductor substrate; forming a metal pad on the insulating film structure; forming a dielectric and/or etch stop film on the metal pad (and optionally over the pixel array); forming a protective layer on the dielectric and/or etch stop film; and forming a pad opening and a pixel opening by etching the protective layer.
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Hyun Woo Seok
Im Ki Sik
Dongbu Hi-Tek Co., Ltd.
Fortney Andrew D.
Kusumakar Karen M
Lebentritt Michael S
Strohl Duangkamol Kay
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