Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2009-11-03
2011-12-13
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S072000, C257S232000, C257S233000, C257S433000, C257S434000, C257S435000, C257SE21211, C257SE31113, C257SE31127, C257SE31128, C438S065000, C438S070000, C065S037000
Reexamination Certificate
active
08076742
ABSTRACT:
An image sensor according to embodiments may include a semiconductor substrate, photodiodes disposed over the semiconductor substrate, a dielectric layer formed over the photodiodes, a color filter layer formed over the dielectric layer, a planarization layer formed over the color filter layer, a phase change material formed over the planarization layer, and a plurality of microlenses formed over the planarization layer, wherein the phase change material is positioned in the microlens. Further, a method for manufacturing an image sensor according to embodiments may include forming a dielectric layer over a semiconductor substrate with a plurality of photodiodes, sequentially forming a color filter layer and a planarization layer over the dielectric layer, forming a phase change material over the planarization layer, forming a patterned phase change material by partially etching the phase change material, and forming microlenses over the planarization layer and the phase change material.
REFERENCES:
patent: 6040591 (2000-03-01), Otsuka
patent: 7791158 (2010-09-01), Jeong et al.
patent: 2007/0110358 (2007-05-01), Hu et al.
patent: 2009/0020700 (2009-01-01), Braunstein et al.
Dongbu Hi-Tek Co., Ltd.
Nguyen Dao H
Sherr & Vaughn, PLLC
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