Image sensor and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257SE31053, C257SE21158, C438S057000

Reexamination Certificate

active

08049288

ABSTRACT:
An image sensor is provided. The image sensor comprises a readout circuitry, interconnections, a first image sensing device, and a second image sensing device. The readout circuitry is disposed on a first substrate. The interconnections comprise a first interconnection and a second interconnection on the first substrate to be electrically connected to the readout circuitry. The first image sensing device is disposed over the first interconnection. The second image sensing device is disposed over the first image sensing device and electrically connected to the second interconnection.

REFERENCES:
patent: 6180967 (2001-01-01), Zanatta et al.
patent: 2008/0093695 (2008-04-01), Gao et al.
patent: 10-2005-0117674 (2005-12-01), None
patent: 10-2007-0000578 (2007-01-01), None
patent: 10-2008-0061434 (2008-07-01), None

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