Image sensor and method for manufacturing the same

Details Image sensor and method for manufacturing the same Image sensor and method for manufacturing the same

2009-12-21

2011-10-04

Such, Matthew W (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257SE31061, C257SE21211, C438S098000

Reexamination Certificate

active

08030727

ABSTRACT:
An image sensor includes a semiconductor substrate, an interconnection and an interlayer dielectric, an image sensing device, a trench, a buffer layer, a barrier pattern, a via hole, and a metal contact. The semiconductor substrate includes a readout circuitry. The interconnection and an interlayer dielectric layer are formed on and/or over the semiconductor substrate while the interconnection is connected to the readout circuitry. The image sensing device may be formed on and/or over the interlayer dielectric and a trench may be formed in the image sensing device, the trench corresponding to the interconnection. The buffer layer may be formed on a sidewall of the trench. The barrier pattern may be formed on the buffer layer with the via hole penetrating through the image sensing device and the interlayer dielectric under the barrier pattern and exposing the interconnection. The metal contact may be formed in the via hole.

REFERENCES:
patent: 7309865 (2007-12-01), Ikushima et al.
patent: 2008/0083939 (2008-04-01), Guidash

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