Image sensor and method for manufacturing the same

Details Image sensor and method for manufacturing the same Image sensor and method for manufacturing the same

2008-12-09

2011-10-04

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S072000, C257S233000, C257SE25032, C257SE27131, C438S073000, C438S478000, C438S491000

Reexamination Certificate

active

08030653

ABSTRACT:
Embodiments relate to an image sensor that may include transistors, a first dielectric, a crystalline semiconductor layer on and/or over the first dielectric, a photodiode, a dummy region, via contacts, and a second dielectric. A photodiode may be formed by implanting impurity ions into a crystalline semiconductor layer to correspond the pixel region. A dummy region may be formed in the crystalline semiconductor layer excepting a region for the photodiode. Via contacts may penetrate the dummy region, and may be connected to the first metal interconnections. A second dielectric may include a plurality of second metal interconnections on and/or over the crystalline semiconductor layer. The plurality of second metal interconnections may electrically connect the via contacts to the photodiode.

REFERENCES:
patent: 4746620 (1988-05-01), Diadiuk et al.
patent: 2006/0199296 (2006-09-01), Sekiguchi et al.
patent: 2008/0093695 (2008-04-01), Gao et al.
patent: 2009/0065828 (2009-03-01), Hwang
patent: 10-2006-0022670 (2006-03-01), None

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