Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-10-09
2011-11-01
Stark, Jarrett (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257SE31127, C438S007000
Reexamination Certificate
active
08049289
ABSTRACT:
Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes a semiconductor substrate including a unit pixel, first to third color filters provided on the semiconductor substrate, a first micro-lens provided on each of the first and third color filters, and a second micro-lens provided on the second color filter, in which an outer periphery of the first micro-lens has a square shape, and an upper portion of the first micro-lens has a semi-spherical or convex shape.
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Dongbu Hi-Tek Co., Ltd.
Fortney Andrew D.
Stark Jarrett
The Law Offices of Andrew D. Fortney
Tynes, Jr. Lawrence
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