Image sensor and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE31127, C438S007000

Reexamination Certificate

active

08049289

ABSTRACT:
Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes a semiconductor substrate including a unit pixel, first to third color filters provided on the semiconductor substrate, a first micro-lens provided on each of the first and third color filters, and a second micro-lens provided on the second color filter, in which an outer periphery of the first micro-lens has a square shape, and an upper portion of the first micro-lens has a semi-spherical or convex shape.

REFERENCES:
patent: 6606198 (2003-08-01), Sasano et al.
patent: 7307788 (2007-12-01), Boettiger et al.
patent: 7842909 (2010-11-01), Dunne et al.
patent: 2001/0036014 (2001-11-01), Sasano et al.
patent: 2006/0027887 (2006-02-01), Boettiger et al.
patent: 2006/0119950 (2006-06-01), Boettiger et al.
patent: 2006/0138498 (2006-06-01), Kim
patent: 2006/002581 (2006-11-01), None
patent: 2000-206310 (2000-07-01), None
patent: 10-2007-0086918 (2007-08-01), None
Ulrich C. Boettiger and Jin Li; “Gapless Microlens Array and Method of Fabrication”; Korean Patent Abstracts; Publication No. 1020070086918 A; Publication Date: Aug. 27, 2007; Korean Intellectual Property Office, Republic of Korea.
Korean Office Action dated Mar. 24, 2009; Korean Patent Application No. 10-2007-0102352; Korean Intellectual Property Office, Republic of Korea.
Korean Office Action; Korean Patent Application No. 10-2008-0087380; Publication Date: Jun. 7, 2010; Korean Intellectual Property Office, Republic of Korea.
Sasano Tomohiko, Tanaka Yasuhiro, Yamagata Michihiro, Sano Yoshikazu, Otagaki Tomoko, Ichikawa Michiyo, Terakawa Sumio, and Aoki Hiromitsu; “Lens Array”; Patent Abstracts of Japan; Publication No. 2000-206310; Publication Date: Jul. 28, 2000; http://www19.ipdl.inpit.go.jp.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Image sensor and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Image sensor and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4278308

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.