Image sensor and method for manufacturing the same

Details Image sensor and method for manufacturing the same Image sensor and method for manufacturing the same

2008-12-26

2011-12-20

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S292000, C257SE21040, C257SE31048, C257SE31113, C438S096000, C438S098000

Reexamination Certificate

active

08080825

ABSTRACT:
An image sensor may include a first substrate having circuitry including wires and a silicon layer formed on and/or over the first substrate to selectively contact the wires. The image sensor may include photodiodes bonded to the first substrate while contacting the silicon layer and electrically connected to the wires. Each unit pixel may be implemented having complicated circuitry without a reduction in photosensitivity. Additional on-chip circuitry may also be implanted in the design.

REFERENCES:
patent: 6791130 (2004-09-01), Chao et al.
patent: 2004/0041224 (2004-03-01), Chao et al.
patent: 2009/0173940 (2009-07-01), Hwang

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