Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2007-12-31
2010-06-01
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C438S016000, C438S031000
Reexamination Certificate
active
07728351
ABSTRACT:
An image sensor provides enhanced integration of transistor circuitry and photo diodes. The image sensor simultaneously improves resolution and sensitivity. An image sensor an a method for manufacturing prevents defects in a photo diode by adopting a vertical photo diode structure. An image sensor includes a substrate which may include at least one circuit element. A bottom electrode and a first conductive layer may be sequentially formed over the substrate. A strained intrinsic layer may be formed over the first conductive layer. A second conductive layer may be formed over the strained intrinsic layer. An upper electrode may be formed over the second conductive layer.
REFERENCES:
patent: 5716480 (1998-02-01), Matsuyama et al.
patent: 6180529 (2001-01-01), Gu
patent: 6468829 (2002-10-01), Guha et al.
patent: 6778723 (2004-08-01), Yang
patent: 6809358 (2004-10-01), Hsieh et al.
patent: 7112495 (2006-09-01), Ko et al.
patent: 2008/0283881 (2008-11-01), Lee
patent: 2008/0315198 (2008-12-01), Jung
G. Wohl, C. Parry, E. Kasper, M. Jutzi and M. Berroth; Second Joint Symposium on opto- and Microelectronic Devices and Circuits, Stuttgart, pp. 77-83 Mar. 10-16, 2002.
IEEE Trandactions on Electron Devices, vol. 45, No. 2, pp. 538-542.
Shu Bin, Zhang He-Ming, Ren Dong-Ling, Wang Wei, Simulation Study of Electrical Properties of CMOS Based on Strained Si/Si Ge, China, May 2007.
Dang Phuc T
Dongbu Hi-Tek Co., Ltd.
Sherr & Vaughn, PLLC
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