Image sensor and method for manufacturing the same

Details Image sensor and method for manufacturing the same Image sensor and method for manufacturing the same

2009-12-22

2010-11-09

Mandala, Victor A (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S073000, C257SE27132

Reexamination Certificate

active

07829367

ABSTRACT:
An image sensor and a method for manufacturing the same are provided. In the method, a photoresist is formed on a substrate including a photodiode region and a gate electrode opposite to the photodiode region on the basis of the gate electrode. An oxide layer is formed to a specific thickness on both the photodiode region and a part of the gate electrode. The photoresist is removed from the substrate and cleaned. A first oxide film is formed on the substrate, the gate electrode, and the oxide layer remaining on the photodiode region. A nitride film is formed on the first oxide film. And a second oxide film is formed on the nitride film. Blank etching is performed on the first oxide film, the nitride film, and the second oxide film to form a spacer at the side of the gate electrode.

REFERENCES:
patent: 6166405 (2000-12-01), Kuriyama et al.
patent: 6376868 (2002-04-01), Rhodes
patent: 6504195 (2003-01-01), Guidash
patent: 2006/0121640 (2006-06-01), Kim

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