Image sensor and method for manufacturing the same

Details Image sensor and method for manufacturing the same Image sensor and method for manufacturing the same

2007-12-26

2010-06-29

Wojciechowicz, Edward (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S067000, C438S070000, C438S074000, C438S075000, C438S381000, C257S292000, C257S440000

Reexamination Certificate

active

07745250

ABSTRACT:
An image sensor and manufacturing process thereof are provided. An image sensor according to an embodiment comprises a first wafer formed with a photodiode cell without a microlens and a second wafer formed with a circuit part including transistor and a capacitor. The first wafer is stacked on the second wafer such that a connecting electrode can be used to electrically connect the photodiode cell of the first wafer to the circuit part of the second wafer.

REFERENCES:
patent: 6486522 (2002-11-01), Bishay et al.
patent: 7547912 (2009-06-01), Osaka et al.
patent: 2006/0165294 (2006-07-01), Mizuno et al.
patent: 2008/0070341 (2008-03-01), Yuzurihara
patent: 10-2004-0115972 (2006-07-01), None
U.S. Appl. No. 11/964,304; filed Dec. 26, 2007, Inventor: Jae Won Han (currently pending claims provided)(not yet published).

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