Image sensor and method for manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

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C438S400000, C438S510000, C438S514000

Reexamination Certificate

active

07732813

ABSTRACT:
An image sensor and a method of manufacturing the same are provided. A metal wiring layer is formed on a semiconductor substrate including a circuit region, and first conductive layers are formed on the metal layer separated by a pixel isolation layer. An intrinsic layer is formed on the first conductive layers, and a second conductive layer is formed on the intrinsic layer.

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U.S. Appl. No. 11/842,580, filed Aug. 21, 2007 (Publication No. US-2008-0258189-A1; published Oct. 23, 2008); Inventor: Seong Gyun Kim (currently pending claims provided).

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