Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-08-21
2010-06-08
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C438S400000, C438S510000, C438S514000
Reexamination Certificate
active
07732813
ABSTRACT:
An image sensor and a method of manufacturing the same are provided. A metal wiring layer is formed on a semiconductor substrate including a circuit region, and first conductive layers are formed on the metal layer separated by a pixel isolation layer. An intrinsic layer is formed on the first conductive layers, and a second conductive layer is formed on the intrinsic layer.
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U.S. Appl. No. 11/842,580, filed Aug. 21, 2007 (Publication No. US-2008-0258189-A1; published Oct. 23, 2008); Inventor: Seong Gyun Kim (currently pending claims provided).
Dongbu Hitek Co., Ltd.
Louie Wai-Sing
Saliwanchik Lloyd & Saliwanchik
Tang Sue
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