Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2008-05-13
2010-06-08
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257SE51040
Reexamination Certificate
active
07732805
ABSTRACT:
An image sensor and a method for manufacturing the same are provided. The image sensor can include transistor circuitry on a substrate, and a photodiode arranged above the transistor circuitry. The photodiode can include carbon nanotubes and a conductive polymer layer on the carbon nanotubes. A transparent conducting electrode can be provided on the carbon nanotubes.
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Bhattacharyya, S., et al. “Photovoltaic Properties of Dye Functionalized Single-Wall Carbon Nanotube/Conjugated Polymer Devices,” Chem. Mater. 2004, 16, 4819-4823.
Dickey Thomas L
Dongbu Hitek Co., Ltd.
Saliwanchik Lloyd & Saliwanchik
Yushin Nikolay
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