Image sensor and method for manufacturing the same

Details Image sensor and method for manufacturing the same Image sensor and method for manufacturing the same

2007-08-21

2010-10-12

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257SE27133

Reexamination Certificate

active

07812350

ABSTRACT:
An image sensor and a method for manufacturing the same are provided. A photodiode region and transistor region are vertically-integrated to improve the fill factor and resolution of the image sensor. Unit pixels can be isolated by a metal isolation layer arranged between adjacent photodiode areas.

REFERENCES:
patent: 4694317 (1987-09-01), Higashi et al.
patent: 6759262 (2004-07-01), Theil et al.
patent: 6809358 (2004-10-01), Hsieh et al.
patent: 7189952 (2007-03-01), Guedj et al.
patent: 2004/0135209 (2004-07-01), Hsieh et al.

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