Image sensor and method for manufacturing the same

Details Image sensor and method for manufacturing the same Image sensor and method for manufacturing the same

2008-09-05

2010-12-07

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S459000, C257SE21352

Reexamination Certificate

active

07846761

ABSTRACT:
Provided is an image sensor and method for manufacturing the same. In the image sensor, a first substrate has a lower metal line and a circuitry thereon. A crystalline semiconductor layer contacts the lower metal line and is bonded to the first substrate. A photodiode is provided in the crystalline semiconductor layer and electrically connected with the lower metal line. A light shielding layer is formed in regions of the photodiode.

REFERENCES:
patent: 6730914 (2004-05-01), Chao et al.
patent: 6927432 (2005-08-01), Holm et al.
patent: 2007/0018266 (2007-01-01), Dupont et al.
patent: 2009/0065826 (2009-03-01), Hwang
patent: 10-2004-0058691 (2004-07-01), None

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