Image sensor and method for manufacturing the same

Details Image sensor and method for manufacturing the same Image sensor and method for manufacturing the same

2007-08-15

2010-12-28

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S431000, C257S434000, C257S435000, C257S464000, C257SE21001, C257SE27132, C257SE27134, C257SE27142, C438S059000, C438S070000

Reexamination Certificate

active

07859072

ABSTRACT:
An image sensor and a fabricating method thereof are provided. The image sensor includes a plurality of pixels disposed in an active region and dummy pixels disposed in a peripheral region. An interlayer dielectric layer has a first thickness in the active region and a second thickness thinner than the first thickness in the peripheral region. Color filters are disposed in the active region, and a light blocking member is disposed in the peripheral region. There is substantially no step difference between the color filters and the light blocking member.

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