Image sensor and method for manufacturing the same

Details Image sensor and method for manufacturing the same Image sensor and method for manufacturing the same

2007-10-29

2009-11-03

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S010000, C438S199000, C257SE27133, C257SE25032

Reexamination Certificate

active

07611922

ABSTRACT:
A method for manufacturing an image sensor includes forming first to third photodiodes and first to third color filters corresponding thereto; forming a photoresist film including photosensitive materials on the upper surfaces of the first to third color filters; forming a first exposed part by exposing the photoresist film with a first exposure energy using a first pattern mask with a first light transmitting part having a first width at boundaries between the individual color filters; forming a second exposed part overlapping a portion of the first exposed part by exposing the photoresist film with a second exposure energy smaller than the first exposure energy using a second pattern mask with a second light transmitting part having a second width wider than the first width; and forming microlenses by developing the photoresist film.

REFERENCES:
patent: 7449357 (2008-11-01), Kim et al.
patent: 2004/0147059 (2004-07-01), Jeong et al.
patent: 2006/0113622 (2006-06-01), Adkisson et al.
patent: 2006/0124948 (2006-06-01), Lee
patent: 10-2005-0103772 (2005-11-01), None
Eun Ji Kim; Double-Lens Image Sensor with Additional Micro Lens and Manufacturing Method Thereof; Publication No. 1020050103772 A; Publication Date Nov. 1, 2005; Korean Patent Abstracts; Korean Intellectual Property Office, Republic of Korea.

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