Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-08-02
2011-08-02
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S432000, C257S443000, C257SE31121, C438S070000
Reexamination Certificate
active
07989908
ABSTRACT:
Provided is an image sensor. The image sensor includes a semiconductor substrate, photodiode structures, color filters, and microlenses. The semiconductor substrate includes a first region having pixel regions and a second region around the first region. The pixel regions are arranged in a matrix configuration. Each of the photodiode structures has a photodiode in each of the pixel regions. The color filters are disposed on or over the photodiode structures, the color filters correspond to the pixel regions, respectively, and have different areas corresponding to incident angles of light.
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Dongbu Hi-Tek Co., Ltd.
Fortney Andrew D.
Loke Steven
Taylor Earl N
The Law Offices of Andrew D. Fortney
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