Image sensor and method for manufacturing the same

Details Image sensor and method for manufacturing the same Image sensor and method for manufacturing the same

2011-06-07

2011-06-07

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257SE27133, C257SE21002, C438S073000

Reexamination Certificate

active

07956434

ABSTRACT:
Embodiments relate to an image sensor and a method of manufacturing the same. According to embodiments, an image sensor may include a first substrate having circuitry formed thereon. It may further include a photodiode bonded to the first substrate and electrically connected to the circuitry, and a contact plug at a pixel border that may be electrically connected with the circuitry and the photodiode. According to embodiments, the photodiode may include a first conductive type ion implantation region selectively provided in a crystalline semiconductor layer, and a second conductive type ion implantation region in contact with one side surface of the first conductive type ion implantation region.

REFERENCES:
patent: 7495206 (2009-02-01), Park
patent: 2005/0029643 (2005-02-01), Koyanagi
patent: 2009/0065829 (2009-03-01), Kim

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