Image sensor and method for manufacturing the same

Details Image sensor and method for manufacturing the same Image sensor and method for manufacturing the same

2011-06-28

2011-06-28

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S070000, C438S075000, C257S443000, C257SE27134

Reexamination Certificate

active

07968366

ABSTRACT:
An image sensor and method of manufacturing the same are provided. According to an embodiment, the image sensor comprises: a circuit including an interconnection on a substrate; a lower electrode on the interconnection; a separated intrinsic layer on the lower electrode; a second conductive type conduction layer on the separated intrinsic layer; and an upper electrode on the second conductive type conduction layer. The separated intrinsic layer can have an inwardly sloping sidewall to focus light incident the photodiode for the unit pixel.

REFERENCES:
patent: 6215164 (2001-04-01), Cao et al.
patent: 6759262 (2004-07-01), Theil et al.
patent: 6841411 (2005-01-01), Varghese

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