Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2007-03-06
2007-03-06
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257SE31110
Reexamination Certificate
active
10544903
ABSTRACT:
An image sensor provided with: a plurality of photodiodes arranged on a surface of a semiconductor substrate, the photodiodes each including a first region of a first conductivity type provided on the semiconductor substrate, a second region of a second conductivity type provided on the first region, the second conductivity type being different from the first conductivity type, and a signal extraction region of the second conductivity type provided on the second region; and an isolation region which electrically isolates the second regions of each adjacent pair of photodiodes from each other, the isolation region including a first trench provided between the second regions of the adjacent photodiodes and an oxide film provided on the first trench in the vicinity of surfaces of the second regions and having a greater width than the first trench.
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Matsumoto Yuji
Sawa Kiyotaka
Sawase Kensuke
Coleman W. David
Rohm & Co., Ltd.
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