Image sensor and method for fabricating the same

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Details

C438S069000, C427S233000, C427S292000, C427S294000

Reexamination Certificate

active

06897086

ABSTRACT:
A CMOS image sensor for improving a characteristic of transmittance therein is provided by forming a convex-shaped color filter pattern that acts as a micro-lens. The CMOS image sensor includes a semiconductor structure having a photodiode and a peripheral circuit, an insulating layer that is formed on the semiconductor structure and that has a trench, and a convex-shaped color filter pattern formed on the insulating layer and covering the trench.

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