Image sensor and method for fabricating the same

Details Image sensor and method for fabricating the same Image sensor and method for fabricating the same

2011-03-01

2011-03-01

Wilson, Allan R (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S461000, C257SE31067, C257SE21165

Reexamination Certificate

active

07897425

ABSTRACT:
A method for fabricating an image sensor. The method may include forming a gate, a photo diode, and a floating diffusion region on a pixel region of a semiconductor substrate; forming an oxide film on the pixel region and on an edge region of the semiconductor substrate; forming a sacrificial oxide layer by etching the oxide film using a first photoresist pattern as a mask; forming a metal layer on the first photoresist pattern, the gate, and the floating diffusion region; forming a salicide layer on the gate and the floating diffusion region; etching a remaining non-salicided portion of the metal layer, the first photoresist pattern, and the sacrificial oxide layer; forming an interlayer insulating film on the semiconductor substrate and planarizing the interlayer insulating film; and forming contact holes and forming an edge open part by etching the interlayer insulating film using a second photoresist pattern as a mask.

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