Image sensor and method for fabricating the same

Details Image sensor and method for fabricating the same Image sensor and method for fabricating the same

2011-08-16

2011-08-16

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Ballistic transport device

C257S233000, C257S461000

Reexamination Certificate

active

07999252

ABSTRACT:
An image sensor includes an epi-layer of a first conductivity type formed in a substrate, a photodiode formed in the epi-layer, and a first doping region of a second conductivity type formed under the photodiode to separate the first doping region from the photodiode.

REFERENCES:
patent: 6521920 (2003-02-01), Abe
patent: 10-2002-0022931 (2002-03-01), None
patent: 10-2003-0000653 (2003-01-01), None
patent: 10-2006-0010886 (2006-02-01), None
Machine translation of KR1020010027712.

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