Image sensor and method for fabricating the same

Details Image sensor and method for fabricating the same Image sensor and method for fabricating the same

2006-08-24

2009-12-29

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S057000, C438S429000, C257SE21551

Reexamination Certificate

active

07638347

ABSTRACT:
An image sensor includes a trench formed by a shallow trench isolation (STI) process, a channel stop layer formed over a substrate in the trench, an isolation structure filled in the trench, and a photodiode formed in the substrate adjacent to a sidewall of the trench. In more detail of the image sensor, a trench is formed in a substrate through a STI process, and a channel stop layer is formed over the substrate in the trench. An isolation structure is formed in the trench, and a photodiode is formed in the substrate adjacent to a sidewall of the trench.

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