Image sensor and method for fabricating the same

Details Image sensor and method for fabricating the same Image sensor and method for fabricating the same

2005-12-05

2008-08-19

Epps, Georgia Y. (Department: 2878)

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

C250S216000, C257S294000, C359S619000, C438S069000

Reexamination Certificate

active

07414232

ABSTRACT:
An image sensor having self-aligned microlenses and a method for fabricating the same. The image sensor includes a photodiode formed in a predetermined surface of a silicon substrate, a planarization layer formed above the silicon substrate, the planarization layer having a recess in correspondence to the photodiode, and a color filter layer having a plurality of color filters formed on the planarization layer by a photolithographic process, each color filter having a convex structure. An area of a focusing lens can be maximized, and a phase signal of unfocused light is absorbed to prevent its photo-electrical conversion, thereby obtaining excellent photosensitivity.

REFERENCES:
patent: 4721999 (1988-01-01), Takemura et al.
patent: 5739548 (1998-04-01), Shigeta et al.
patent: 6540946 (2003-04-01), Assadi et al.
patent: 6897086 (2005-05-01), Kim
patent: 2005/0224694 (2005-10-01), Yaung
patent: 1020000044582 (2000-07-01), None

Affiliated with

Also associated with

Rating

Image sensor and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Image sensor and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image sensor and method for fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4006039