Image sensor and method for fabricating the same

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S451000, C257S292000, C257S446000

Reexamination Certificate

active

06979587

ABSTRACT:
The present invention provides an image sensor capable of suppressing the dark current due to crystalline defects occurring at an edge of a field oxide layer and a method for fabricating the same. The present invention provides an image sensor including: a semiconductor substrate; an active area including a photodiode area formed in a predetermined position of the substrate, a floating diffusion area having a smaller area than the photodiode area and a channel area having a bottle-neck structure connecting to the photodiode area and the floating diffusion area; a field area for isolating electrically the active area; a field stop layer being formed beneath the field area by having a wider area than the field area through an expansion towards the active area with a first width; and a gate electrode formed on the substrate by covering the channel area and having one side superposed with a second width on one entire side of the photodiode contacted to the channel area.

REFERENCES:
patent: 6417023 (2002-07-01), Suzuki et al.
patent: 6528342 (2003-03-01), Miyagawa et al.
patent: 2002/0117699 (2002-08-01), Francois
patent: 2002-0001635 (2002-09-01), None
Son, Jeong-Hwan et al, IEEE, 1999, pp. 122-124.
Yonemoto, Kazuya et al, IEEE, 12/2000, vol. 35, No. 12, pp. 2038-2043.
Blanksby, Andrew J., IEEE, 1/2000, vol. 47, No. 1, pp. 55-64.

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