Image sensor and manufacturing method thereof

Details Image sensor and manufacturing method thereof Image sensor and manufacturing method thereof

2009-07-24

2011-11-29

Hannaher, Constantine (Department: 2884)

Radiant energy

Invisible radiant energy responsive electric signalling

Infrared responsive

C438S059000, C438S130000, C438S411000, C438S412000

Reexamination Certificate

active

08067740

ABSTRACT:
An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels.

REFERENCES:
patent: 5972758 (1999-10-01), Liang
patent: 7119334 (2006-10-01), Secundo et al.
patent: 7361899 (2008-04-01), Iida
patent: 2005/0264617 (2005-12-01), Nishimura et al.
Yasuhiro Kosasayama, et al., “High sensitive uncooled infrared FPA with SOI diode detectors”, ITE Technical Report Vo.32, No. 6, IST Apr. 2008 (Feb. 2008), pp. 21-26.

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