Image sensor and manufacturing method thereof

Details Image sensor and manufacturing method thereof Image sensor and manufacturing method thereof

2007-09-14

2009-12-22

Mandala, Victor A (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S414000, C257S432000

Reexamination Certificate

active

07635607

ABSTRACT:
An image sensor and fabricating method thereof are provided. A multi-layered interlayer insulating layer is formed on a substrate including a photodiode, and a metal line is formed in the interlayer insulating layer, such that the metal line passes through the interlayer insulating layer. A conductive barrier layer is formed on the metal line, a color filter array is formed on the interlayer insulating layer and the metal line, and microlenses are formed on the color filter array.

REFERENCES:
patent: 6329275 (2001-12-01), Ishigami et al.
patent: 6379992 (2002-04-01), Jo
patent: 2005/0012166 (2005-01-01), Choi
patent: 2007/0063299 (2007-03-01), Hwang
patent: 10-2004-0115935 (2006-07-01), None

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