Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-03-31
2008-12-16
Thai, Luan (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S432000, C257S433000, C257S434000, C257S435000
Reexamination Certificate
active
07466001
ABSTRACT:
In a manufacturing method of an image sensor, a lightproof film (an antireflective film for avoiding flares) is formed over a wiring area; a transparent film is formed over an imaging area using a material capable of patterning; a transparent film, for forming micro lenses on top, is formed on the transparent film, wherein a height of the top surfaces of the transparent film and the lightproof film are evenly formed.
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Nagayoshi Ryoichi
Okamoto Hiroshi
Sakoh Hiroshi
Panasonic Corporation
Thai Luan
Wenderoth , Lind & Ponack, L.L.P.
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