Image sensor and manufacturing method of image sensor

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257S432000, C257S433000, C257S434000, C257S435000

Reexamination Certificate

active

07466001

ABSTRACT:
In a manufacturing method of an image sensor, a lightproof film (an antireflective film for avoiding flares) is formed over a wiring area; a transparent film is formed over an imaging area using a material capable of patterning; a transparent film, for forming micro lenses on top, is formed on the transparent film, wherein a height of the top surfaces of the transparent film and the lightproof film are evenly formed.

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patent: 9-293848 (1997-11-01), None

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