Image sensor and its manufacture

Details Image sensor and its manufacture Image sensor and its manufacture

1998-05-20

2000-04-25

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257448, 257459, 257461, H01L 31075, H01L 31105, H01L 31117

Patent

active

060547464

ABSTRACT:
An image sensor comprising an array of pixels 2, each pixel 2 including a pin or nip photodiode P. At least the intrinsic semiconductor layer of the photodiodes of a group of pixels is shared between those pixels and acts as a barrier to reduce edge leakage currents. A group of pixels may be a row of pixels, or may be all pixels of the array.

REFERENCES:
patent: 4797560 (1989-01-01), Berger et al.
patent: 5097120 (1992-03-01), Kitamura et al.
patent: 5132541 (1992-07-01), Conrads et al.
patent: 5753960 (1998-05-01), Dickmann
"An Ohmic Contact Formation Method for Fabricating a SI TFT's on Large Size Substrate", by T. Yukawa et al., Proceedings of the 9th International Display Research Conference, Oct. 16-18, 1989, Japan Display '89, pp. 506-509.

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