Image sensor and fabrication method thereof

Details Image sensor and fabrication method thereof Image sensor and fabrication method thereof

2009-07-22

2011-12-06

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S222000, C257S292000, C257SE31079

Reexamination Certificate

active

08071417

ABSTRACT:
An image sensor is provided. The image sensor comprises a semiconductor substrate, a dielectric interlayer, an interconnection, an image sensing unit, a via hole piercing the image sensing unit and the dielectric layer, and a bottom electrode. The semiconductor substrate includes a readout circuit. The dielectric interlayer is disposed on the semiconductor substrate. The interconnection is disposed in the dielectric interlayer and connected electrically to the readout circuit. The image sensing unit is disposed on the dielectric interlayer and includes a stack of a first impurity region and a second impurity region. The via hole pierces the image sensing unit and the dielectric interlayer to expose the interconnection. The bottom electrode is disposed in the via hole to electrically connect the interconnection and the first impurity region of the image sensing unit.

REFERENCES:
patent: 6762401 (2004-07-01), Lee
patent: 6902946 (2005-06-01), Theil
patent: 7276749 (2007-10-01), Martin et al.
patent: 7884401 (2011-02-01), Shim
patent: 10-2004-0003955 (2004-01-01), None
patent: 10-2007-0000578 (2007-01-01), None

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