Image sensor and fabricating method thereof

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S057000, C438S069000, C257SE21001

Reexamination Certificate

active

07829370

ABSTRACT:
An image sensor and fabricating method thereof which reduces a light intensity differential between a pixel center and a pixel edge and prevents crosstalk. The image sensor can include a plurality of convex lens provided within a passivation layer and in vertical alignment with a corresponding photodiode, each convex lens including a color filter; having a predetermined color array, and a plurality of microlens provided over the passivation layer and in vertical alignment with a corresponding color filer.

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patent: 1591886 (2005-03-01), None
patent: 1020060011411 (2006-02-01), None

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