Image sensor and fabricating method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S431000, C257SE31093, C257SE31121, C257SE31127

Reexamination Certificate

active

07629662

ABSTRACT:
An image sensor is provided having: a color filter layer including a red color filter with a first thickness, a green color filter with a second thickness, and a blue color filter with a third thickness; and a microlens array having a first microlens with a fourth thickness formed on the red color filter, a second microlens with a fifth thickness formed on the green color filter, and a third microlens with a sixth thickness formed on the blue color filter. In one embodiment, the sums of the first thickness and the fourth thickness, the second thickness and the fifth thickness, and the third thickness and the sixth thickness can be the same.

REFERENCES:
patent: 7312093 (2007-12-01), Ryu
patent: 2007/0008421 (2007-01-01), Wu et al.
patent: 2007/0026564 (2007-02-01), Wu et al.
patent: 10-2005-0134129 (2007-04-01), None

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